Model: | AS1M025120P |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | Anbon Semiconductor |
Description: | N-CHANNEL SILIC |
Encapsulation: | - |
Package: | Tube |
RoHS Status: | 1 |
Obtain quotation information
|
Quantity
Price
Total Price
1
$38.0300
$38.0300
10
$33.8000
$338.0000
100
$29.5600
$2,956.0000
TYPE | DESCRIPTION |
Mfr | Anbon Semiconductor |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
Power Dissipation (Max) | 463W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 15mA |
Supplier Device Package | TO-247-3 |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs (Max) | +25V, -10V |
Drain to Source Voltage (Vdss) | 1200 V |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 1000 V |