Model: | AS2M040120P |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | Anbon Semiconductor |
Description: | N-CHANNEL SILIC |
Encapsulation: | - |
Package: | Bulk |
RoHS Status: | 1 |
Obtain quotation information
|
Quantity
Price
Total Price
1
$20.6900
$20.6900
10
$18.3900
$183.9000
100
$16.0800
$1,608.0000
500
$13.7200
$6,860.0000
TYPE | DESCRIPTION |
Mfr | Anbon Semiconductor |
Series | - |
Package | Bulk |
Product Status | ACTIVE |
Package / Case | TO-247-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
Power Dissipation (Max) | 330W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 10mA |
Supplier Device Package | TO-247-3 |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs (Max) | +25V, -10V |
Drain to Source Voltage (Vdss) | 1200 V |
Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 2946 pF @ 1000 V |