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  • image of Single FETs, MOSFETs>CGD65B130S2-T13
  • image of Single FETs, MOSFETs>CGD65B130S2-T13
Model CGD65B130S2-T13
Product Category Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT,
Encapsulation -
Package Tape & Reel (TR)
RoHS Status 1
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Price: $6.4200
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Total Price

1

$6.4200

$6.4200

10

$5.3900

$53.9000

100

$4.3600

$436.0000

500

$3.8800

$1,940.0000

1000

$3.3200

$3,320.0000

2000

$3.1300

$6,260.0000

5000

$3.0000

$15,000.0000

image of Single FETs, MOSFETs>17634831
17634831
Model
17634831
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT,
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
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