Model: | CGD65B200S2-T13 |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | Cambridge GaN Devices |
Description: | 650V GAN HEMT, |
Encapsulation: | - |
Package: | Tape & Reel (TR) |
RoHS Status: | 1 |
Obtain quotation information
|
Quantity
Price
Total Price
1
$4.5500
$4.5500
10
$3.8200
$38.2000
100
$3.0900
$309.0000
500
$2.7500
$1,375.0000
1000
$2.3500
$2,350.0000
2000
$2.2100
$4,420.0000
5000
$2.1300
$10,650.0000
TYPE | DESCRIPTION |
Mfr | Cambridge GaN Devices |
Series | ICeGaN™ |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 8-PowerVDFN |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
FET Feature | Current Sensing |
Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
Supplier Device Package | 8-DFN (5x6) |
Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
Vgs (Max) | +20V, -1V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |