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  • image of Single FETs, MOSFETs>FBG20N18BSH
  • image of Single FETs, MOSFETs>FBG20N18BSH
Model FBG20N18BSH
Product Category Single FETs, MOSFETs
Manufacturer EPC Space
Description GAN FET HEMT 20
Encapsulation -
Package Bulk
RoHS Status
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Price: $392.7500
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$392.7500

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image of Single FETs, MOSFETs>17395210
17395210
Model
17395210
Product Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Description
GAN FET HEMT 20
Encapsulation
-
Package
Bulk
lang_roHSStatusStatus
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 100 V
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