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Huizhong Dingtai
| Model： | ICE60N199 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | IceMOS Technology |
| Description： | Superjunction M |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | |
|
Obtain quotation information
|
Quantity
Price
Total Price
50
$2.5100
$125.5000
1000
$2.3500
$2,350.0000
5000
$2.1500
$10,750.0000
15000
$1.9800
$29,700.0000
25000
$1.8400
$46,000.0000
| TYPE | DESCRIPTION |
| Mfr | IceMOS Technology |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |
