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  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
Model IMBG65R015M2HXTMA1
Product Category Single FETs, MOSFETs
Manufacturer IR (Infineon Technologies)
Description SILICON CARBIDE
Encapsulation -
Package Tape & Reel (TR)
RoHS Status 1
Obtain quotation information
Price: $14.3800
Enter Quantity

Quantity

Price

Total Price

1

$21.3500

$21.3500

10

$19.6900

$196.9000

25

$18.8100

$470.2500

100

$16.8200

$1,682.0000

250

$16.0400

$4,010.0000

500

$15.2700

$7,635.0000

1000

$14.3800

$14,380.0000

image of Single FETs, MOSFETs>22157763
22157763
Model
22157763
Product Category
Single FETs, MOSFETs
Manufacturer
IR (Infineon Technologies)
Description
SILICON CARBIDE
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
SeriesCoolSiC™ Gen 2
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C115A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 64.2A, 18V
Power Dissipation (Max)416W (Tc)
Vgs(th) (Max) @ Id5.6V @ 13mA
Supplier Device PackagePG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Vgs (Max)+23V, -7V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2792 pF @ 400 V
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