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  • image of IGBT Modules>NXH100T120L3Q0S1NG
  • image of IGBT Modules>NXH100T120L3Q0S1NG
Model NXH100T120L3Q0S1NG
Product Category IGBT Modules
Manufacturer Sanyo Semiconductor/onsemi
Description 1200V GEN III Q
Encapsulation -
Package Tray
RoHS Status 1
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Price: $60.5700
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image of IGBT Modules>21575831
21575831
Model
21575831
Product Category
IGBT Modules
Manufacturer
Sanyo Semiconductor/onsemi
Description
1200V GEN III Q
Encapsulation
-
Package
Tray
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
NTC ThermistorYes
Supplier Device Package18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max122 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce4877 pF @ 25 V
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