Language:en 
- zh-cn
- en
Huizhong Dingtai
| Model： | PSMN1R9-40YSBX |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Nexperia |
| Description： | PSMN1R9-40YSB/S |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$1.4400
$1.4400
10
$1.1800
$11.8000
100
$0.9100
$91.0000
500
$0.7700
$385.0000
1500
$0.6300
$945.0000
3000
$0.5900
$1,770.0000
7500
$0.5700
$4,275.0000
10500
$0.5400
$5,670.0000
| TYPE | DESCRIPTION |
| Mfr | Nexperia |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 194W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6297 pF @ 20 V |
