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Huizhong Dingtai
| Model： | TP65H050WS |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Transphorm |
| Description： | GANFET N-CH 650 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$17.6700
$17.6700
30
$14.3000
$429.0000
120
$13.4600
$1,615.2000
510
$12.2000
$6,222.0000
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
