Model: | TP65H070LSG-TR |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | Transphorm |
Description: | GANFET N-CH 650 |
Encapsulation: | - |
Package: | Tape & Reel (TR) |
RoHS Status: | 1 |
Obtain quotation information
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Quantity
Price
Total Price
1
$8.8700
$8.8700
10
$7.8200
$78.2000
100
$7.4400
$744.0000
500
$7.4400
$3,720.0000
TYPE | DESCRIPTION |
Mfr | Transphorm |
Series | TP65H070L |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 3-PowerDFN |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
Power Dissipation (Max) | 96W (Tc) |
Vgs(th) (Max) @ Id | 4.8V @ 700µA |
Supplier Device Package | 3-PQFN (8x8) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |