Model: | TPD3215M |
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Product Category: | FET, MOSFET Arrays |
Manufacturer: | Transphorm |
Description: | GANFET 2N-CH 60 |
Encapsulation: | - |
Package: | Bulk |
RoHS Status: | |
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|
TYPE | DESCRIPTION |
Mfr | Transphorm |
Series | - |
Package | Bulk |
Product Status | OBSOLETE |
Package / Case | Module |
Mounting Type | Through Hole |
Configuration | 2 N-Channel (Half Bridge) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
Power - Max | 470W |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
Supplier Device Package | Module |