Model: | TRS12V65H,LQ |
---|---|
Product Category: | Single Diodes |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Description: | G3 SIC-SBD 650V |
Encapsulation: | - |
Package: | Tape & Reel (TR) |
RoHS Status: | 1 |
Quantity
Price
Total Price
1
$3.2800
$3.2800
10
$2.7500
$27.5000
100
$2.2300
$223.0000
500
$1.9800
$990.0000
1000
$1.7000
$1,700.0000
2500
$1.6000
$4,000.0000
5000
$1.5300
$7,650.0000
TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | - |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 4-VSFN Exposed Pad |
Mounting Type | Surface Mount |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Technology | SiC (Silicon Carbide) Schottky |
Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
Current - Average Rectified (Io) | 12A |
Supplier Device Package | 4-DFN-EP (8x8) |
Operating Temperature - Junction | 175°C |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
Current - Reverse Leakage @ Vr | 120 µA @ 650 V |