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Huizhong Dingtai
| Model： | XP3N9R5AYT |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | YAGEO XSEMI |
| Description： | MOSFET N-CH 30V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$0.9100
$0.9100
10
$0.7400
$7.4000
100
$0.5800
$58.0000
500
$0.4900
$245.0000
1000
$0.4000
$400.0000
3000
$0.3700
$1,110.0000
6000
$0.3600
$2,160.0000
9000
$0.3400
$3,060.0000
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XP3N9R5A |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 38.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9.5A, 10V |
| Power Dissipation (Max) | 3.57W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PMPAK® 3 x 3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 15 V |
