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Huizhong Dingtai
| Model： | XP6NA2R4IT |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | YAGEO XSEMI |
| Description： | MOSFET N-CH 60V |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$8.4300
$8.4300
50
$6.7300
$336.5000
100
$6.0200
$602.0000
500
$5.3200
$2,660.0000
1000
$4.7800
$4,780.0000
2000
$4.4800
$8,960.0000
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XP6NA2R4 |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 40A, 10V |
| Power Dissipation (Max) | 1.92W (Ta), 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220CFM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 192 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 50 V |
